Used as an RF amplifier to boost weak television signals before mixing.
A dual-gate FET features four primary terminals. Accurate installation is critical, as swapping the gates or the drain/source will cause circuit failure or component degradation.
An older but highly capable N-channel dual-gate option often used in legacy IF/RF stages. 3sk41 datasheet
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The control or modulation input. This is typically used for AGC biasing or local oscillator (LO) injection in mixer circuits. Used as an RF amplifier to boost weak
While exact datasheet values can vary slightly by manufacturer (e.g., NEC, Hitachi, or Motorola), the standard parameters for this type of MOSFET include:
, it is a classic component often found in amateur radio equipment and older television tuners. www.jotrin.ru Key Technical Specifications An older but highly capable N-channel dual-gate option
If you are maintaining vintage communications gear, restoring old television tuners, or studying legacy RF design, understanding the 3SK41 datasheet is essential. This article breaks down its core specifications, pin configuration, and practical application parameters. 1. Key Features and Applications
Are you trying to calculate the for an RF circuit?
Standard single-gate MOSFETs suffer from the , where internal parasitic capacitance between the drain and gate amplifies feedback, causing instability and self-oscillation at radio frequencies.
The provides critical technical specifications for an legacy N-channel dual-gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) . Originally manufactured by Japanese and global semiconductor pioneers including NEC, Hitachi, and Motorola , the 3SK41 was built in a TO-72 (CAN-4) metal package . It was engineering-optimized for high-frequency RF amplification, fast switching, and low noise figures in consumer and industrial communication tuners.